Modeling and design of a Mott selector for a ReRAM-based non-volatile memory cell in a crossbar architecture

In this work, we developed a model for nonvolatile memory cell based on the electrical TiOX/HfOx ReRAM and hybrid electrothermal of VO2 Mott selector recently by our team. Both models have been calibrated validated with experimental data, operating characteristics one-selector-one-ReRAM (1S1R) has studied. The length layer was varied as design parameter to meet requirements proper read, write, erase operations. Simulation results suggest that modified 60 nm meets all operation, write voltage 1.6 V 2.5 V. access time structure studied benchmarking data. Write 10.5 ns 16 obtained from simulations.